
HI-SINCERITY
MICROELECTRONICS CORP.
HM965
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9511
Issued Date : 1996.04.12
Revised Date : 2002.10.01
Page No. : 1/3
HM965
HSMC Product Specification
Description
The HM965 is designed for use as AF output amplifier and glash unit.
Features
Low VCE(sat)
High performance at low supply voltage
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................... 1.2 W
Maximum Voltages and Currents (Ta=25
°
C)
BVCBO Collector to Base Voltage....................................................................................... 40 V
BVCEO Collector to Emitter Voltage.................................................................................... 20 V
BVEBO Emitter to Base Voltage............................................................................................ 7 V
IC Collector Current (Continuous) ......................................................................................... 5 A
IC Collector Current (Peak PT=10mS).................................................................................. 8 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
20
7
-
-
-
340
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
Unit
V
V
V
uA
uA
V
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=10V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classifications Of hFE1
Rank
Range
R
S
340-600
560-800
SOT-89