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參數(shù)資料
| 型號(hào)： | HMBD2003 |
| 廠商： | HSMC CORP. |
| 英文描述： | General purpose diodes fabricated in planar technology |
| 中文描述： | 通用二極管制成的平面技術(shù) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 19K |
| 代理商： | HMBD2003 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBD2003\C\S
Spec. No. : HE6857
Issued Date : 1994.01.25
Revised Date : 2002.10.25
Page No. : 1/2
HMBD2003, HMBD2003C, HMBD2003S
HSMC Product Specification
Description
The HMBD2003\C\S are general purpose diodes fabricated in planar
technology, and encapsulated in small plastic SMD SOT-23 package.
Features
Small plastic SMD package
Switching speed: max. 50 nS
General application:
Continuous reverse voltage: Max. 200 V
Repetitive peak reverse voltage: Max. 250 V
Repetitive peak forward current: Max. 625 mA
Absolute Maximum Ratings
(Ta=25
°
C)
Characteristic
Symbol
Value
250
250
250
200
200
200
225
625
1
250 Max
150
-65~+150
Unit
HMBD2003 Repetitive Peak Reverse Voltage
HMBD2003C Repetitive Peak Reverse Voltage
HMBD2003S Repetitive Peak Reverse Voltage
HMBD2003 Continuous reverse voltage
HMBD2003C Continuous reverse voltage
HMBD2003S Continuous reverse voltage
Forward Continuous Current at Ta=25
°
C
Repetitive Peak Forward Current at Ta=25
°
C
Surge Forward Current at t =1mS, Ta=25
°
C
Power Dissipation
Junction Temperature
Storage Temperature Range
VRRM
V
VR
V
lF
mA
mA
A
mV
°
C
°
C
IFRM
IFSM
PD
Tj
Tstg
Characteristics
(Ta=25
°
C)
Characteristic
Symbol
VF(1)
VF(2)
Condition
Min
-
-
-
-
-
5
Max
1
1.25
100
100
100
-
Unit
IF=100mA
IF=200mA
VR=200V
VR=200V
VR=200V
VR=0V, f=1MHz
IF=30mA to IR=30mA
RL=100
measured at
IR=3mA
IR=100uA
Forward Voltage
V
HMBD2003 Reverse Current
HMBD2003C Reverse Current
HMBD2003S Reverse Current
Total Capacitance
IR
nA
CT
pF
Reverse Recovery Time
Trr
50
-
nS
BV
R
BV
R
250
-
V
SOT-23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMBD2003C | General purpose diodes fabricated in planar technology |
| HMBD2003S | General purpose diodes fabricated in planar technology |
| HMBD2004 | General purpose diodes fabricated in planar tehnology |
| HMBD2004C | General purpose diodes fabricated in planar tehnology |
| HMBD2004S | General purpose diodes fabricated in planar tehnology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMBD2003C | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:General purpose diodes fabricated in planar technology |
| HMBD2003S | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:General purpose diodes fabricated in planar technology |
| HMBD2004 | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:General purpose diodes fabricated in planar tehnology |
| HMBD2004C | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:General purpose diodes fabricated in planar tehnology |
| HMBD2004S | 制造商:HSMC 制造商全稱(chēng):HSMC 功能描述:General purpose diodes fabricated in planar tehnology |
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