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參數(shù)資料
| 型號(hào)： | HM62W8512B |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (512-kword ×8-bit)(4 M 靜態(tài)RAM(512k字×8位)) |
| 中文描述： | 四米的SRAM（512 - KWord的× 8位）（4個(gè)M靜態(tài)隨機(jī)存儲(chǔ)器（為512k字× 8位）） |
| 文件頁數(shù)： | 17/17頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HM62W8512B |
HM62W8512B Series
17
Revision Record
Rev. Date
Contents of Modification
Drawn by
Approved by
0.0
Apr. 24, 1998 Initial issue
M.Higuchi
K. Imato
0.1
Nov. 19, 1998 DC Characteristics
I
CC1
(-5) max: 35 mA to 45 mA
I
CC1
(-7) max: 30 mA to 40 mA
I
max: 20/2
μ
A to 40/20
μ
A
Low V
Data Retention Characteristics
I
max: 10/1
μ
A to 20/10
μ
A
Change of note1 and 2
S. Kunito
K. Imato
1.0
Dec. 17, 1998 Deletion of Preliminary
Features
Change of Power dissipation
Active: TBD (typ) to 16.5 mW/MHz (typ)
Standby: TBD (typ) to 3.3
μ
W (typ)
DC Characteristics
I
CC2
typ: TBD to 5 mA
I
typ: TBD/TBD to 1/1
μ
A
Low V
Data Retention Characteristics
I
CCDR
typ: TBD/TBD to 0.8/0.8
μ
A
Apr. 8, 1999
Addition of L-UL-version
DC Characteristics
I
SB1
typ: 1/1
μ
A to 1/1/1
μ
A
I
max: 40/20
μ
A to 40/20/5
μ
A
Addition of note4
Low V
Data Retention Characteristics
I
CCDR
typ: 0.8/0.8
μ
A to 0.8/0.8/0.8
μ
A
I
max: 20/10
μ
A to 20/10/2
μ
A
Addition of note3
S. Kunito
K. Imato
2.0
S. Kunito
K. Imato
3.0
Aug. 24, 1999 Low V
Data Retention Characteristics
Correct error: t
R
unit ms to ns
Oct. 20, 1999 Low V
Data Retention Characteristics
Change of Low V
CC
Data Retention Timmng Waveform
S. Kunito
K. Imato
4.0
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