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參數(shù)資料
| 型號： | HM62W8511HC |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 4M High Speed SRAM (512-kword x 8-bit) |
| 中文描述： | 4分高速SRAM（512 - KWord的× 8位） |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 63K |
| 代理商： | HM62W8511HC |
HM62W8511HI Series
4
Operation Table
CS
OE
WE
Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
I/O
Ref. cycle
H
×
×
Standby
High-Z
—
L
H
H
Output disable
High-Z
—
L
L
H
Read
Dout
Read cycle (1) to (3)
L
H
L
Write
Din
Write cycle (1)
L
Note:
L
L
Write
Din
Write cycle (2)
×
: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
–0.5 to +4.6
V
–0.5*
1
to V
CC
+0.5*
2
1.0
V
W
Operating temperature
–40 to +85
°
C
°
C
°
C
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
8 ns
2. V
T
(max) = V
CC
+2.0 V for pulse width (over shoot)
≤
8 ns
Tbias
–40 to +85
Recommended DC Operating Conditions
(Ta = –40 to +85
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
3
V
SS
*
4
V
IH
V
IL
3.0
3.3
3.6
V
0
0
0
V
Input voltage
2.2
—
V
CC
+ 0.5*
2
0.8
V
–0.5*
1
—
V
Notes: 1. V
IL
(min) = –2.0 V for pulse width (under shoot)
≤
8 ns
2. V
IH
(max) = V
CC
+2.0 V for pulse width (over shoot)
≤
8 ns
3. The supply voltage with all V
CC
pins must be on the same level.
4. The supply voltage with all V
SS
pins must be on the same level.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM62W8511HCJP-10 | 4M High Speed SRAM (512-kword x 8-bit) |
| HM62W8511HCJP-12 | 4M High Speed SRAM (512-kword x 8-bit) |
| HM62W8511HCLJP-10 | BOX 5.0X1.85X1.0 W/CLP BLK |
| HM62W8511HCLJP-12 | BOX 5.0X1.85X1.0 W/CLP GRY |
| HM62W8511H | 4M High Speed SRAM (512-kword ×8-bit)(4M高速靜態(tài)RAM(512k字 ×8位)) |
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