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參數(shù)資料
| 型號(hào)： | HM62W4100H |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M High Speed SRAM (1-Mword ×4-bit)(4M高速靜態(tài)RAM(1M字×4位)) |
| 中文描述： | 4分高速SRAM（1 - Mword × 4位）（4分高速靜態(tài)隨機(jī)存儲(chǔ)器（100萬字× 4位）） |
| 文件頁數(shù)： | 14/14頁 |
| 文件大小： | 105K |
| 代理商： | HM62W4100H |
HM62W4100H Series
14
Revision Record
Rev.
0.0
Date
Apr. 28, 1997
Contents of Modification
Initial issue
Drawn by
A. Ide
Approved by
A. Ide
0.1
Nov. 20, 1997
Change of subtitle
K. Makuta
K. Makuta
0.2
Dec. 5, 1997
Features
Addition of Operating current
Addition of TTL standby current
Addition of CMOS standby current
Addition of Data retention current
Addition of Data retention voltage
Change of Block Diagram
Absolute Maximum Ratings
V
IH
(max) : V
+ 0.3 V to V
CC
+ 0.5 V
V
(min) : –0.3 V to –0.5 V
Change of notes
Recommended DC Operating Conditions
Change of notes
DC Characteristics
I
CC
(max): 240/200/190 mA to 160/140/120 mA
I
SB
(max): 100/100/100 mA to 70/60/50 mA
I
(max): 10/0.5 mA to 5/1 mA
Test conditions I
CC
and I
: Addition of Min cycle
Test conditions I
SB1
: Addition of f = 0 MHz
AC Characteristics
Change of Output load (A)
t
OE
, t
CHZ
and t
OHZ
(max): 5/6/8 ns to 5/6/7 ns
t
AW
, t
and t
(min): 6/8/10 ns to 7/8/10 ns
t
DW
(min): 5/6/8 ns to 5/6/7 ns
t
and t
(max): 5/6/8 ns to 5/6/7 ns
Low V
CC
Data Retention Characteristics
I
CCDR
: —/2/300
μ
A to —/—/300
μ
A
Features
Change of Operating current
Change of Block Diagram
DC Characteristics
I
CC
(max): 160/140/120 mA to 200/180/160 mA
Delete of HM62W4100H-10 Series
Features
Change of Data retention current
DC Characteristics
I
(typ): —/— mA to 0.05/0.05 mA
Low V
CC
Data Retention Characteristics
I
CCDR
: —/—/300
μ
A to —/40/600
μ
A
T. Fukazawa
K. Makuta
0.3
May. 15, 1998
T. Fukazawa
K. Makuta
1.0
Sep. 15, 1998
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