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參數(shù)資料
| 型號： | HM628512BI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (512-kword ×8-bit)(4M靜態(tài)RAM (512k字 ×8位)) |
| 中文描述： | 四米的SRAM（512 - KWord的× 8位）（4分靜態(tài)隨機(jī)存儲器（為512k字× 8位）） |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 86K |
| 代理商： | HM628512BI |
HM628512BI Series
5
Capacitance (Ta = +25
°
C, f = 1 MHz)
Note:
1.This parameter is sampled and not 100% tested.
AC Characteristics (Ta =
–40 to +85
°
C, V
CC
= 5 V
±
10%, unless otherwise noted.)
Test Conditions
Input pulse levels: 0.5 V to 2.5 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.5 V
Output load:1 TTL Gate + C
L
(100 pF) (Including scope and jig)
Read Cycle
Parameter
Input capacitance*
1
Input/output capacitance*
1
Symbol
Cin
C
I/O
Typ
—
—
Max
8
10
Unit
pF
pF
Test conditions
Vin = 0 V
V
I/O
= 0 V
HM628512BI
-7
Min
70
—
—
—
10
5
0
0
10
-8
Min
85
—
—
—
10
5
0
0
10
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Chip selection to output in low-Z
Output enable to output in low-Z
Chip deselection to output in high-Z
Output disable to output in high-Z
Output hold from address change
Symbol
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
Max
—
70
70
35
—
—
25
25
—
Max
—
85
85
45
—
—
30
30
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
2
2
1, 2
1, 2
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| HM628512CLTT-5 | 4 M SRAM (512-kword x 8-bit) |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HM628512BISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HM628512BLFP-5 | 制造商:Hitachi 功能描述:Static RAM, 512Kx8, 32 Pin, Plastic, SOP |
| HM628512BLFP-5SL | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BLFP-5UL | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BLFP7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IC-SM-4MB CMOS SRAM |
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