參數(shù)資料
型號(hào): HM5117805
廠商: Elpida Memory, Inc.
英文描述: 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
中文描述: 16米EDO公司的DRAM(2 Mword × 8位)2度刷新
文件頁(yè)數(shù): 10/32頁(yè)
文件大?。?/td> 549K
代理商: HM5117805
EO rdc
HM5117805 Series
Data Sheet E0156H10
10
Write Cycle
HM5117805
-5
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Write command setup time
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
0
0
0
ns
14
Write command hold time
7
10
13
ns
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
7
10
10
ns
7
10
13
ns
7
10
13
ns
Data-in setup time
0
0
0
ns
15
Data-in hold time
7
10
13
ns
15
Read-Modify-Write Cycle
HM5117805
-5
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Read-modify-write cycle time
RAS
to
WE
delay time
CAS
to
WE
delay time
Column address to
WE
delay time
OE
hold time from
WE
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
111
135
161
ns
67
79
92
ns
14
30
34
40
ns
14
42
49
57
ns
14
13
15
18
ns
Refresh Cycle
HM5117805
-5
-6
-7
Parameter
CAS
setup time (CBR refresh cycle) t
CSR
CAS
hold time (CBR refresh cycle)
WE
setup time (CBR refresh cycle)
WE
hold time (CBR refresh cycle)
RAS
precharge to
CAS
hold time
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
5
5
5
ns
t
CHR
t
WRP
t
WRH
t
RPC
7
10
10
ns
0
0
0
ns
7
10
10
ns
5
5
5
ns
相關(guān)PDF資料
PDF描述
HM5117805LTS-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LTS-6 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LTS-7 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LTT-6 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LTT-7 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5117805J-5 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805J-6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805J-7 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LJ-5 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LJ-6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh