參數(shù)資料
型號: HM42
廠商: HSMC CORP.
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶體管
文件頁數(shù): 1/3頁
文件大小: 31K
代理商: HM42
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9510-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
HM42
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM42 is designed for application as a video output to drive
color CRT, or as a dialer circuit in electronics telephone.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ...................................................................................... 300 V
VCEO Collector to Emitter Voltage................................................................................... 300 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
300
300
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
3
Max.
-
-
-
100
100
500
900
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=260V
VEB=6V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
MHz
pF
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