HI-SINCERITY
MICROELECTRONICS CORP.
HMBT468
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 1/5
HMBT468
HSMC Product Specification
Description
The HMBT468 is designed for general purpose low frequency power amplifier
applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature..................................................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
A
=25
°
C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 25 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 20 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 5 V
I
C
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE
f
T
Cob
Min.
25
20
5
-
-
-
85
-
-
Typ.
-
-
-
-
-
-
-
190
22
Max.
-
-
-
1
500
1
400
-
-
Unit
V
V
V
uA
mV
V
Test Conditions
I
C
=10uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=20V, I
E
=0
I
C
=0.8A, I
B
=80mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, f=1MHz, I
E
=0
MHz
pF
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification of hFE
Rank
Range
B
C
D
85-170
120-240
200-400
SOT-23