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參數(shù)資料
| 型號： | HM1-6617B883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 2K x 8 CMOS PROM |
| 中文描述： | 2K × 8的CMOS胎膜早破 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 91K |
| 代理商： | HM1-6617B883 |
6-253
Read Cycle Time
TELEL
VCC = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
TA
≤
+125
o
C
136
-
160
-
ns
NOTES:
1. All voltages referenced to Device GND.
2. AC measurements assume transition time
≤
5ns; input levels = 0.0V to 3.0V; timing reference levels = 1.5V; output load = 1TTL equiva-
lent load and CL
50pF.
3. Typical derating = 5mA/MHz increase in ICCOP.
4. All tests performed with P hardwired to VCC.
5. TAVQV = TELQV + TAVEL.
6. Tested as follows: f = 1MHz, VIH = 2.4V, VIL = 0.8V, IOH = -1mA, IOL = +1mA, VOH
≥
1.5V, VOL
≤
1.5V.
TABLE 3. HM-6617/883 AC AND DC ELECTRICAL PERFORMANCE SPECIFICATIONS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
NOTES
TEMPERATURE
LIMITS
HM-6617B/883
LIMITS
HM-6617/883
UNITS
MIN
MAX
MIN
MAX
Input Capacitance
CIN
VCC = Open, f = 1MHz, All
Measurements Referenced to
Device GND
2, 3
+25
o
C
-
10
-
10
pF
VCC = Open, f = 1MHz, All
Measurements Referenced to
Device GND
2, 4
+25
o
C
-
12
-
12
pF
2, 5
+25
o
C
-
10
-
10
pF
I/O Capacitance
CI/O
VCC = Open, f = 1MHz, All
Measurements Referenced to
Device GND
2, 3
+25
o
C
-
12
-
12
pF
VCC = Open, f = 1MHz, All
Measurements Referenced to
Device GND
2, 4
+25
o
C
-
14
-
14
pF
2, 5
+25
o
C
-
12
-
12
pF
Chip Enable Time
TELQX
VCC = 4.5V and 5.5V
2
-55
o
C
≤
TA
≤
+125
o
C
5
-
5
-
ns
Output Enable Time
TGLQX
VCC = 4.5V and 5.5V
2
-55
o
C
≤
TA
≤
+125
o
C
5
-
5
-
ns
Chip Disable Time
TEHQZ
VCC = 4.5V and 5.5V
2
-55
o
C
≤
TA
≤
+125
o
C
-
45
-
50
ns
Output Disable Time
TGHQZ
VCC = 4.5V and 5.5V
2
-55
o
C
≤
TA
≤
+125
o
C
-
40
-
50
ns
Output High Voltage
VOH2
VCC = 4.5V, IO = 100
μ
A
2
-55
o
C
≤
TA
≤
+125
o
C
VCC-
1V
-
VCC-
1V
-
V
NOTES:
1. All tests performed with P hardwired to VCC.
2. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are char-
acterized upon initial design changes which would affect these characteristics.
3. Applies to 0.600 inch SBDIP device types only.
4. Applies to 0.300 inch SBDIP device types only.
5. Applies to Ceramic Leadless Chip Carrier (CLCC) device types only.
TABLE 2. HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTES 1, 2, 4)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
HM-6617B/883
LIMITS
HM-6617/883
UNITS
MIN
MAX
MIN
MAX
HM-6617/883
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