參數(shù)資料
型號(hào)： HM1-6617B883
廠商： Intersil Corporation
英文描述： 2K x 8 CMOS PROM
中文描述： 2K × 8的CMOS胎膜早破
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 91K
代理商： HM1-6617B883
6-252
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
Typical Derating Factor. . . . . . . . . . . . 5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.8V
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . +2.4V to VCC +0.3V
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . .
Slim SBDIP . . . . . . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
9
o
C/W
14
o
C/W
19
o
C/W
48
o
C/W
65
o
C/W
58
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5473 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TABLE 1. HM-6617/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTES 1, 4)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
High Level Output Voltage
VOH1
VCC = 4.5V, IO = -2.0mA
1, 2, 3
-55
o
C
≤
TA
≤
+125
o
C
2.4
-
V
Low Level Output Voltage
VOL
VCC = 4.5V, IO = +4.8mA
1, 2, 3
-55
o
C
≤
TA
≤
+125
o
C
-
0.4
V
High Impedance Output
Leakage Current
IIOZ
VCC = 5.5V, G = 5.5V,
VI/O = GND or VCC
1, 2, 3
-55
o
C
≤
TA
≤
+125
o
C
-1.0
1.0
μ
A
Input Leakage Current
II
VCC = 5.5V, VI = GND or
VCC, P Not Tested
1, 2, 3
-55
o
C
≤
TA
≤
+125
o
C
-1.0
1.0
μ
A
Standby Supply Current
ICCSB
VI = VCC or GND,
VCC = 5.5V, IO = 0mA
1, 2, 3
-55
o
C
≤
TA
≤
+125
o
C
-
100
μ
A
Operating Supply Current
ICCOP
VCC = 5.5V, G = GND,
(Note 3), f = 1MHz, IO =
0mA, VI = VCC or GND
1, 2, 3
-55
o
C
≤
TA
≤
+125
o
C
-
20
mA
Functional Test
FT
VCC = 4.5V (Note 6)
7, 8A, 8B
-55
o
C
≤
TA
≤
+125
o
C
-
-
TABLE 2. HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTES 1, 2, 4)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
HM-6617B/883
LIMITS
HM-6617/883
UNITS
MIN
MAX
MIN
MAX
Address Access Time
TAVQV
VCC = 4.5V and 5.5V
(Note 5)
9, 10, 11
-55
o
C
≤
TA
≤
+125
o
C
-
105
-
140
ns
Output Enable Access
Time
TGLQV
VCC = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
TA
≤
+125
o
C
-
40
-
50
ns
Chip Enable Access
Time
TELQV
VCC = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
TA
≤
+125
o
C
-
90
-
120
ns
Address Setup Time
TAVEL
VCC = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
TA
≤
+125
o
C
15
-
20
-
ns
Address Hold Time
TELAX
VCC = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
TA
≤
+125
o
C
20
-
25
-
ns
Chip Enable Low Width
TELEH
VCC = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
TA
≤
+125
o
C
95
-
120
-
ns
Chip Enable High Width
TEHEL
VCC = 4.5V and 5.5V
9, 10, 11
-55
o
C
≤
TA
≤
+125
o
C
40
-
40
-
ns
HM-6617/883
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