參數(shù)資料
型號(hào)： HJ44H11
廠商： HSMC CORP.
英文描述： Card Edge Connector; No. of Contacts:20; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes
中文描述： 瑞展晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 29K
代理商： HJ44H11
HI-SINCERITY
MICROELECTRONICS CORP.
HJ44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6005-B
Issued Date : 1994.11.09
Revised Date : 2000.11.01
Page No. : 1/3
HSMC Product Specification
Description
The HJ44H11 is designed for various specific and general purpose
applications, such as: output and driver stages of amplifiers operat-
ing at frequencies from DC to greater than 1MHz;series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCEO Collector to Base Voltage...................................................................................... 80 V
BVCES Collector to Emitter Voltage................................................................................... 80 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current ............................................................................................................. 8 A
IB Base Current.................................................................................................................... 5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVCES
BVEBO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Cob
fT
Min.
80
80
5
-
-
-
-
60
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
130
50
Max.
-
-
-
10
50
1
1.5
-
-
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=30mA, IB=0
IC=1mA, IB=0
IE=1mA, IC=0
VCB=80V, VEB=0
VEB=5V, IC=0
IC=8A, IB=0.4A
IC=8A, IB=0.8A
VCE=1V, IC=2A
VCE=1V, IC=4A
VCB=10V,
VCE=10V, IC=500mA, f=20MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
MHz
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