參數(shù)資料
型號: HIP6501ACBZ
廠商: INTERSIL CORP
元件分類: 電源管理
英文描述: Triple Linear Power Controller with ACPI Control Interface
中文描述: 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
封裝: ROHS COMPLIANT, PLASTIC, MS-012-AC, SOIC-16
文件頁數(shù): 12/14頁
文件大?。?/td> 340K
代理商: HIP6501ACBZ
12
FN4749.6
December 30, 2004
Q4
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5V
DUAL
output during S3 and
S4/S5 states (as dictated by EN5VDL status), then, similar to
the situation where Q1 is a MOSFET, the selection criteria of
this device is also proper voltage budgeting. The maximum
r
DS(ON)
, however, has to be achieved with only 4.5V of V
GS
,
so a logic level MOSFET needs to be selected. If a PNP
device is chosen to perform this function, it has to have a low
saturation voltage while providing the maximum sleep-state
current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA;
4mA during soft-start).
Q3, Q5
The two N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3VDUAL and 5VDUAL outputs, respectively, while in
active (S0, S1) states. Similar r
DS(ON)
criteria apply in these
cases as well, unlike the PMOS, however, these NMOS
transistors get the benefit of an increased V
GS
drive
(approximately 8V and 7V, respectively).
Q2
The NPN transistor used as sleep-state pass element on the
3.3V
DUAL
output must have a minimum current gain of 100
at V
CE
= 1.5V, and I
CE
= 500mA throughout the in-circuit
operating temperature range.
HIP6501A
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