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參數(shù)資料
| 型號(hào)： | HIP6003CB |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Buck Pulse-Width Modulator (PWM) Controller and Output Voltage Monitor |
| 中文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 208K |
| 代理商： | HIP6003CB |
10
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 10 shows the upper gate drive (BOOT pin) supplied
by a bootstrap circuit from V
CC
. The boot capacitor, C
BOOT
,
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V
CC
less the boot diode drop (V
D
) when the Schottky diode, D2,
conducts. Logic-level MOSFETs can only be used if the
MOSFETs absolute gate-to-source voltage rating exceeds
the maximum voltage applied to V
CC
.
Figure 11 shows the upper gate drive supplied by a direct
connection to V
CC
. This option should only be used in
converter systems where the main input voltage is + 5VDC or
less. The peak upper gate-to-source voltage is approximately
V
CC
less the input supply. For +5V main power and + 12VDC
for the bias, the gate-to-source voltage of Q1 is 7V. A logic-
level MOSFET is a good choice for Q1 under these
conditions.
Schottky Selection
Rectifier D2 conducts when the upper MOSFET Q1 is off.
The diode should be a Schottky type for low power losses.
The power dissipation in the Schottky rectifier is
approximated by:
In addition to power dissipation, package selection and
heatsink requirements are the main design trade-offs in
choosing the Schottky rectifier. Since the three factors are
interrelated, the selection process is an iterative procedure.
The maximum junction temperature of the rectifier must
remain below the manufacturer’s specified value, typically
125
o
C. By using the package thermal resistance
specification and the Schottky power dissipation equation
(shown above), the junction temperature of the rectifier can
be estimated. Be sure to use the available airflow and
ambient temperature to determine the junction temperature
rise. HIP6003 DC-DC Converter Application Circuit.
+12V
HIP6003
GND
UGATE
PHASE
BOOT
VCC
+5V OR +12V
NOTE:
V
G-S
≈
V
CC
-V
D
C
BOOT
D
BOOT
Q1
D2
+
-
FIGURE 10. UPPER GATE DRIVE - BOOTSTRAP OPTION
V
D
+
-
+12V
HIP6003
GND
UGATE
PHASE
BOOT
VCC
+5V OR LESS
NOTE:
V
G-S
≈
V
CC
-5V
Q1
D2
+
-
IGURE 11. UPPER GATE DRIVE - DIRECT V
CC
DRIVE OPTION
P
COND
= I
O
x V
f
x 1 - D
Where: D is the duty cycle = V
O
/V
IN
, and
V
f
is the Schottky forward voltage drop
)
HIP6003
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