參數(shù)資料
型號(hào): HIP6002
廠商: Intersil Corporation
英文描述: Rectifier (PWM) Controller and Output Voltage Monitor(整流器PWM控制器和輸出電壓檢測(cè)器)
中文描述: 整流器(PWM)控制器和輸出電壓監(jiān)視器(整流器的PWM控制器和輸出電壓檢測(cè)器)
文件頁(yè)數(shù): 10/12頁(yè)
文件大?。?/td> 211K
代理商: HIP6002
10
the upper MOSFET switching losses. Ensure that both
MOSFETs are within their maximum junction temperature at
high ambient temperature by calculating the temperature rise
according to package thermal-resistance specifications. A
separate heatsink may be necessary depending upon
MOSFET power, package type, ambient temperature and air
flow.
Standard-gate MOSFETs are normally recommended for
use with the HIP6002. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFET’s absolute
gate-to-source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 10 shows the upper gate drive (BOOT pin) supplied
by a bootstrap circuit from V
CC
. The boot capacitor, C
BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V
CC
less the boot diode drop (V
D
) when the lower MOSFET, Q2
turns on. Logic-level MOSFETs can only be used if the
MOSFET’s absolute gate-to-source voltage rating exceeds
the maximum voltage applied to V
CC
.
Figure 11 shows the upper gate drive supplied by a direct
connection to V
CC
. This option should only be used in
converter systems where the main input voltage is +5 VDC or
less. The peak upper gate-to-source voltage is approximately
V
CC
less the input supply. For + 5V main power and + 12
VDC for the bias, the gate-to-source voltage of Q1 is 7V. A
logic-level MOSFET is a good choice for Q1 and a logic-level
MOSFET can be used for Q2 if its absolute gate-to-source
voltage rating exceeds the maximum voltage applied to V
CC
.
Schottky Selection
Rectifier D2 is a clamp that catches the negative inductor
swing during the dead time between turning off the lower
MOSFET and turning on the upper MOSFET. The diode
must be a Schottky type to prevent the lossy parasitic
MOSFET body diode from conducting. It is acceptable to
omit the diode and let the body diode of the lower MOSFET
clamp the negative inductor swing, but efficiency will drop
one or two percent as a result. The diode’s rated reverse
breakdown voltage must be greater than the maximum input
voltage.
HIP6002 DC-DC Converter Application
Circuit
Figure 12 shows an application circuit of a DC-DC Converter
for an Intel Pentium Pro microprocessor. Detailed
information on the circuit, including a complete
Bill-of-Materials and circuit board description, can be found
in Application Note AN9668. See Intersil’s home page on the
web: www.intersil.com or Intersil AnswerFAX
(321-724-7800) document # 99668.
+12V
PGND
HIP6002
GND
LGATE
UGATE
PHASE
BOOT
VCC
+5V OR +12V
NOTE:
V
G-S
V
CC
-V
D
NOTE:
V
G-S
V
CC
C
BOOT
D
BOOT
Q1
Q2
+
-
FIGURE 10. UPPER GATE DRIVE - BOOTSTRAP OPTION
V
D
+
D2
-
+12V
PGND
HIP6002
GND
LGATE
UGATE
PHASE
BOOT
VCC
+5V OR LESS
NOTE:
V
G-S
V
CC
-5V
NOTE:
V
G-S
V
CC
Q1
Q2
+
-
FIGURE 11. UPPER GATE DRIVE - DIRECT V
CC
DRIVE OPTION
D2
HIP6002
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