參數(shù)資料
型號(hào)： HIP5020
廠商： Intersil Corporation
英文描述： High-efficiency, Buck Converter Controller(高效電源控制器)
中文描述： 高效率，降壓轉(zhuǎn)換器控制器（高效電源控制器）
文件頁(yè)數(shù)： 13/15頁(yè)
文件大小： 128K
代理商： HIP5020
2-25
The charge pump can be used to supply current for external
loads on the VCC pin. Figure 11 shows the regulation
characteristics of the charge pump in the various operating
regions. These characteristics are for a DC-DC converter
(Circuit 3) operating at 100kHz and with 1
μ
F capacitors for C4
and C5. The charge pump may not be suitable for some
applications and external loads. Be sure that the load can
tolerate the V
CC
voltage variation with input voltage. During
Hysteretic Mode, the external load should be removed when
the converter turns off. Note that the charge pump and
oscillator are disabled with RUN low (see Operating Modes).
The external load could cause an under-voltage lockout trip
and subsequent soft-start cycle.
Light Load Power Dissipation
The converter efficiency and power dissipation at light load is
mainly a function of the bias supplied to the HIP5020. Figure
12 shows the input current as a function of the input voltage
for the two states of the RUN signal. I
IN
is summation of both
the current into the VIN and VINF pins. The curve for I
IN
with
the RUN signal High does not include the gate drive power.
The gate drive power is a function of the MOSFETs gate
charge, voltage and switching frequency. Figure 13 shows
the combined gate energy required by the internal
MOSFETs with the charge pump characteristics. To
determine the total bias power:
1. Multiply the value in Figure 13 by the switching frequency.
2. Add the product of the voltage and current from the RUN
= High curve in Figure 12.
3. Multiply by the ratio of RUN time to the Hysteretic period.
4. Add the product of the voltage and current from the RUN
= Low curve in Figure 12.
MOSFET On-Resistance
Conduction losses are a significant portion of the power
dissipation in a DC-DC converter. The HIP5020 conduction
losses are the product of the square of the average output
current and the MOSFET on-resistance - r
DS(ON)
. The
r
DS(ON)
of the MOSFETs is a function of V
CC
and junction
temperature. V
CC
changes with the input voltage as shown
in Figure 10 above. Figure 14 shows the maximum r
DS(ON)
of both MOSFETs as a function of input voltage for a junction
temperature of 25
o
C. The junction temperature of the
HIP5020 also effects r
DS(ON)
. Figure 15 shows the r
DS(ON)
as a function of temperature for three gate voltage levels.
0
5
10
15
20
5
10
15
20
INPUT VOLTAGE (V)
V
C
FIGURE 10. CHARGE PUMP REGULATOR INPUT VOLTAGE
CHARACTERISTICS
CHARGE
PUMP
DISABLED
REGULATION
REGION
VOLTAGE
DOUBLER
REGION
1
2
5
10
20
50
100
14
12
10
8
EXTERNAL LOAD (MADC)
V
C
FIGURE 11. BIAS VOLTAGE (V
CC
) vs EXTERNAL LOAD
CURRENT
V
IN
= 5VDC
V
IN
= 12VDC
V
IN
= 8.65VDC
CIRCUIT 3
100
80
60
40
20
0
0
5
10
15
20
V
IN
(V)
I
I
μ
A
FIGURE 12. BIAS POWER CHARACTERISTICS
RUN = LOW
RUN = HIGH
CT - GND
0
5
10
15
20
V
IN
(V)
G
μ
J
0.4
0.3
0.2
0.1
0.0
FIGURE 13. MOSFET GATE ENERGY CHARACTERISTICS vs
INPUT VOLTAGE
HIP5020
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HIP5020DB 制造商:Rochester Electronics LLC 功能描述:SYNCHRONOUS BUCK -28 SOIC -0-70C - Bulk
HIP5020DB WAF 制造商:Harris Corporation 功能描述: 制造商:Intersil Corporation 功能描述:
HIP5020EVAL2 制造商:Harris Corporation 功能描述:
HIP5060 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Power Control IC Single Chip PowerSupply
HIP5060D WAF 制造商:Harris Corporation 功能描述:
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