參數(shù)資料
型號： HIP2100IB
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
中文描述： 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
文件頁數(shù)： 3/7頁
文件大?。?/td> 49K
代理商： HIP2100IB
3
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V
DD,
V
HB
-V
HS
. . . . . . . . . . . . . . . . . . -0.3V to 18V
LI and HI Voltages . . . . . . . . . . . . . . . . . . . . . . . . -3V to V
DD
+0.3V
Voltage on LO . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V
DD
+0.3V
Voltage on HO . . . . . . . . . . . . . . . . . . . . . . V
HS
-0.3V to V
HB
+0.3V
Voltage on HS (Continuous) . . . . . . . . . . . . . . . . . . . . . -1V to 110V
Voltage on HB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V
DD
to HB diode. . . . . . . . . . . . . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)
NOTE: AllVoltagesRelativetoPin7,V
SS
UnlessOtherwiseSpecified
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
Thermal Resistance
SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOIC in Thermal Conductive Media. . . . . . . . . . . . . . . . . 70
o
C/W
HS Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65
o
C to 150
o
C
Junction Temperature Range. . . . . . . . . . . . . . . . . . -55
o
C to 150
o
C
Lead Temperature (Soldering 10s - Lead Tips Only). . . . . . . 300
o
C
Maximum Power Dissipation at +25
o
C in Free Air. . . . . . . . 780mW
θ
JA
θ
N/A
160
o
C/W
Recommended Operating Conditions
Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . +9V to +16.5V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V
Voltage on HB V
HS
+8V to V
HS
+16.5V and V
DD
-1V to V
DD
+100V
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
T
J
= 25
o
C
TYP
T
J
= - 40
o
C
TO 125
o
C
UNITS
MIN
MAX
MIN
MAX
SUPPLY CURRENTS
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
I
DD
I
DDO
I
HB
I
HBO
I
HBS
I
HBSO
LI = HI = 0V
-
0.1
0.15
-
0.2
mA
f = 500kHz
-
1.5
2.5
-
3
mA
LI = HI = 0V
-
0.1
0.15
-
0.2
mA
Total HB Operating Current
f = 500kHz
-
1.5
2.5
-
3
mA
HB to V
SS
Current, Quiescent
HB to V
SS
Current, Operating
INPUT PINS
V
HS
= V
HB
= 116.5V
f = 500kHz
-
0.05
1
-
10
μ
A
-
0.7
-
-
-
mA
Low Level Input Voltage Threshold
V
IL
V
IH
V
IHYS
R
I
4
5.4
-
3
-
V
High Level Input Voltage Threshold
-
5.8
7
-
8
V
Input Voltage Hysteresis
-
0.4
-
-
-
V
Input Pulldown Resistance
-
200
-
100
500
k
UNDER VOLTAGE PROTECTION
V
DD
Rising Threshold
V
DD
Threshold Hysteresis
HB Rising Threshold
V
DDR
V
DDH
V
HBR
V
HBH
7
7.3
7.8
6.5
8
V
-
0.5
-
-
-
V
6.5
6.9
7.5
6
8
V
HB Threshold Hysteresis
-
0.4
-
-
-
V
BOOT STRAP DIODE
Low-Current Forward Voltage
V
DL
V
DH
R
D
I
VDD-HB
= 100
μ
A
I
VDD-HB
= 100mA
I
VDD-HB
= 100mA
-
0.45
0.55
-
0.7
V
High-Current Forward Voltage
-
0.7
0.8
-
1
V
Dynamic Resistance
-
0.8
1
-
1.5
LO GATE DRIVER
Low Level Output Voltage
V
OLL
V
OHL
I
OHL
I
OLL
I
LO
= 100mA
I
LO
= -100mA, V
OHL
= V
DD
-V
LO
V
LO
= 0V
V
LO
= 12V
-
0.25
0.3
-
0.4
V
High Level Output Voltage
-
0.25
0.3
-
0.4
V
Peak Pullup Current
-
2
-
-
-
A
Peak Pulldown Current
-
2
-
-
-
A
HO GATE DRIVER
Low Level Output Voltage
V
OLH
V
OHH
I
OHH
I
OLH
I
HO
= 100mA
I
HO
= -100mA, V
OHH
= V
HB
-V
HO
V
HO
= 0V
V
HO
= 12V
-
0.25
0.3
-
0.4
V
High Level Output Voltage
-
0.25
0.3
-
0.4
V
Peak Pullup Current
-
2
-
-
-
A
Peak Pulldown Current
-
2
-
-
-
A
HIP2100
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