參數(shù)資料
型號: HIP2060
廠商: Intersil Corporation
英文描述: 60V, 10A Half Bridge Power MOSFET Array(60V, 10A半橋功率MOSFET陣列)
中文描述: 60V的10A條半橋式功率MOSFET陣列(60V的10A條半橋功率MOSFET的陣列)
文件頁數(shù): 5/8頁
文件大小: 59K
代理商: HIP2060
5
FIGURE 7. NORMALIZED V
GS(TH)
vs JUNCTION
TEMPERATURE
FIGURE 8. GATE-SOURCE VOLTAGE vs GATE CHARGE
FIGURE 9. CAPACITANCE vs VOLTAGE
FIGURE 10. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Typical Performance Curves
(Continued)
0
-75
0.5
1.0
1.5
2.0
T
J
, JUNCTION TEMPERATURE (
o
C)
N
G
-25
25
75
125
175
V
GS
= V
DS
, I
D
= 250
μ
A
0
5
10
15
20
0
4
8
12
16
V
G
,
Q, GATE CHARGE (nC)
V
DS
= 50V
V
DS
= 30V
V
DS
= 20V
I
D
= 10A, T
C
= 25
o
C
0
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
15
20
25
0
200
400
600
800
1000
C
C
RSS
C
OSS(U)
C
OSS(L)
C
ISS
V
GS
= 0V, f = 1MHz, T
C
= 25
o
C
0
2
4
6
8
12
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
10
V
GS
= 15V
V
GS
= 10V
0.01
0.1
1
10
-5
10
10
-4
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
o
10
1
Z
θ
J
,
NOTES:
1. DUTY FACTOR, D = t
1
/t
2
2. PEAK T
J
= P
DM
x (Z
θ
JC
) +T
C
0.2
0.5
0.1
0.05
0.02
0.01
SINGLE PULSE
T
C
= 25
o
C
D = 1.0
HIP2060
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