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參數(shù)資料
| 型號： | HIP2060 |
| 廠商： | Intersil Corporation |
| 英文描述： | 60V, 10A Half Bridge Power MOSFET Array(60V, 10A半橋功率MOSFET陣列) |
| 中文描述： | 60V的10A條半橋式功率MOSFET陣列（60V的10A條半橋功率MOSFET的陣列） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 59K |
| 代理商： | HIP2060 |
3
Turn-On Delay Time (Note 5)
t
d(ON)
V
DD
= 30V, R
L
= 3
I
D
= 10A, V
GS
= 10V, R
G
= 50
See Figure 14
-
4
-
ns
Rise Time (Note 5)
t
r
-
5
-
ns
Turn-Off Delay Time (Note 5)
t
d(OFF)
-
12
-
ns
Fall Time (Note 5)
t
f
-
6
-
ns
Total Gate Charge (Note 5)
Q
g(TOT)
V
DS
= 50V, V
GS
= 10V, I
D
= 10A
See Figures 16 and 17
-
10.5
12.0
nC
Gate-Source Charge (Note 5)
Q
gs
-
1.4
2.0
nC
Gate-Drain Charge (Note 5)
Q
gd
-
4.9
5.5
nC
Short-Circuit Input Capacitance,
Common Source
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
-
230
-
pF
Short-Circuit Output Capacitance,
Common Source for Upper FET
C
OSS(U)
-
150
-
pF
Short Circuit Output Capacitance
Common Source for Lower FET
C
OSS(L)
-
225
-
pF
Short-Circuit Reverse Transfer
Capacitance, Common Source
C
RSS
-
40
-
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
2.7
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
60
o
C/W
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SOURCE-TO-DRAIN DIODE SPECIFICATIONS
(Across Z1 and Z2)
Forward Voltage (Note 4)
V
SD
I
SD
= 10A, V
GS
= 0V
-
1.05
1.25
V
Reverse Recovery Time (Across Z1)
t
rr(S1-D1)
I
SD
= 10A, dI
SD
/dt = 100A/
μ
s
-
50
-
ns
Reverse Recovery Time (Across Z2)
t
rr(S2-D2)
I
SD
= 10A, dI
SD
/dt = 100A/
μ
s
-
75
-
ns
SOURCE2-TO-DRAIN1 DIODE SPECIFICATIONS D
(Across D1)
Forward Voltage (Note 4)
V
SD
I
SD
= 10A, V
GS
= 0V
-
8.5
9.5
V
Reverse Recovery Time
t
rr
I
SD
= 10A, dI
SD
/dt = 100A/
μ
s
-
200
-
ns
DEVICE MATCHING
Drain-Source On Resistance Match
r
DS(ON)M
V
GS
= 10V, I
D
= 10A, T
C
= 25
o
C
-
90
-
%
NOTES:
4. Pulse test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
5. Independent of operating temperature.
HIP2060
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PDF描述 |
|---|---|
| HIP2060AS1 | 60V, 10A Half Bridge Power MOSFET Array |
| HIP2060AS2 | 20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN |
| HIP2060AS3 | 20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP2060 WAF | 制造商:Intersil Corporation 功能描述: |
| HIP2060AS1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60V, 10A Half Bridge Power MOSFET Array |
| HIP2060AS2 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60V, 10A Half Bridge Power MOSFET Array |
| HIP2060AS3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60V, 10A Half Bridge Power MOSFET Array |
| HIP2060ASE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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