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參數資料
| 型號： | HI5735KCP |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | DAC |
| 英文描述： | 12-Bit, 80 MSPS, High Speed Video D/A Converter |
| 中文描述： | PARALLEL, WORD INPUT LOADING, 0.02 us SETTLING TIME, 12-BIT DAC, PDIP28 |
| 文件頁數： | 4/12頁 |
| 文件大?。?/td> | 136K |
| 代理商： | HI5735KCP |
1624
Spurious Free Dynamic Range to Nyquist
(Note 3)
f
CLK
= 40MHz, f
OUT
= 2.02MHz, 20MHz Span
-
70
-
dBc
f
CLK
= 80MHz, f
OUT
= 2.02MHz, 40MHz Span
-
70
-
dBc
REFERENCE/CONTROL AMPLIFIER
Internal Reference Voltage, V
REF
(Note 4)
-1.27
-1.23
-1.17
V
Internal Reference Voltage Drift
(Note 3)
-
50
-
μ
V/
o
C
Internal Reference Output Current Sink/Source
Capability
(Note 3)
-125
-
+50
μ
A
Internal Reference Load Regulation
I
REF
= 0 to I
REF
= -125
μ
A
-
50
-
μ
V
Input Impedance at REF OUT pin
(Note 3)
-
1.4
-
k
Amplifier Large Signal Bandwidth (0.6V
P-P
)
Sine Wave Input, to Slew Rate Limited (Note 3)
-
3
-
MHz
Amplifier Small Signal Bandwidth (0.1V
P-P
)
Sine Wave Input, to -3dB Loss (Note 3)
-
10
-
MHz
Reference Input Impedance
(Note 3)
-
12
-
k
Reference Input Multiplying Bandwidth (CTL IN)
R
L
= 50
, 100mV Sine Wave, to -3dB Loss at
I
OUT
(Note 3)
-
200
-
MHz
DIGITAL INPUTS
(D9-D0, CLK, INVERT)
Input Logic High Voltage, V
IH
(Note 4)
2.0
-
-
V
Input Logic Low Voltage, V
IL
(Note 4)
-
-
0.8
V
Input Logic Current, I
IH
(Note 4)
-
-
400
μ
A
Input Logic Current, I
IL
(Note 4)
-
-
700
μ
A
Digital Input Capacitance, C
IN
(Note 3)
-
3.0
-
pF
TIMING CHARACTERISTICS
Data Setup Time, t
SU
See Figure 1 (Note 3)
3.0
2.0
-
ns
Data Hold Time, t
HLD
See Figure 1 (Note 3)
0.5
0.25
-
ns
Propagation Delay Time, t
PD
See Figure 1 (Note 3)
-
4.5
-
ns
CLK Pulse Width, t
PW1
, t
PW2
See Figure 1 (Note 3)
3.0
-
-
ns
POWER SUPPLY CHARACTERISITICS
I
EEA
(Note 4)
-
42
50
mA
I
EED
(Note 4)
-
70
85
mA
I
CCD
(Note 4)
-
13
20
mA
Power Dissipation
(Note 4)
-
650
-
mW
Power Supply Rejection Ratio
V
CC
±
5%, V
EE
±
5%
-
5
-
μ
A/V
NOTES:
2. Gain Error measured as the error in the ratio between the full scale output current and the current through R
SET
(typically 1.28mA). Ideally
the ratio should be 16.
3. Parameter guaranteed by design or characterization and not production tested.
4. All devices are 100% tested at 25
o
C. 100% production tested at temperature extremes for military temperature devices, sample tested
for industrial temperature devices.
5. Dynamic Range must be limited to a 1V swing within the compliance range.
Electrical Specifications
AV
EE
, DV
EE
= -4.94 to -5.46V, V
CC
= +4.75 to +5.25V, V
REF
= Internal
T
A
= 25
o
C for All Typical Values
(Continued)
PARAMETER
TEST CONDITIONS
HI5735BI
T
A
= 0
o
C TO 70
o
C
UNITS
MIN
TYP
MAX
HI5735
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