參數(shù)資料
型號(hào): HI3-0539-5
廠商: HARRIS SEMICONDUCTOR
元件分類: 運(yùn)動(dòng)控制電子
英文描述: RESISTOR POWER 150 OHM 8W 5%
中文描述: 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP16
文件頁(yè)數(shù): 11/11頁(yè)
文件大小: 189K
代理商: HI3-0539-5
11
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
92 mils x 100 mils
METALLIZATION:
Type: AlCu
Thickness: 16k
±
2k
SUBSTRATE POTENTIAL (NOTE):
-V
SUPPLY
PASSIVATION:
Type: Nitride Over Silox
Nitride Thickness: 3.5k
±
1k
Silox Thickness: 12k
±
2.0k
WORST CASE CURRENT DENSITY:
2.54 x 10
5
A/cm
2
at 20mA
TRANSISTOR COUNT:
236
PROCESS:
CMOS-DI
NOTE: The substrate appears resistive to the -V
SUPPLY
terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
conductor at -V
SUPPLY
potential.
Metallization Mask Layout
HI-539
V-
EN
A
0
A
1
GND
V+
OUTB
IN4B
IN4A
OUTA
IN3A
IN2A
IN2B
IN1B
IN1A
IN3B
HI-539
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