參數(shù)資料
型號(hào)： HI1538
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 31K
代理商： HI1538
HI-SINCERITY
MICROELECTRONICS CORP.
HI1538
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9020-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HSMC Product Specification
Description
High-definition CRT display video output, wide-band amp.
Features
High fT: fT=400MHz
High breakdown voltage: VCEO=120Vmin
Small reverse transfer capacitance and excellent HF response
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................................ 1.3 W
Total Power Dissipation (Tc=25
°
C)................................................................................................. 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -120 V
BVCEO Collector to Emitter Voltage ............................................................................................ -120 V
BVEBO Emitter to Base Voltage ...................................................................................................... -3 V
IC Collector Current .................................................................................................................. -200 mA
IC Peak Collector Current ......................................................................................................... -400 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-120
-120
-3
-
-
-
-
60
40
400
2.8
Typ.
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
-100
-100
-1
-1
320
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-80V
VEB=-2V,
IC=-30mA, IB=-3mA
IC=-30mA, IB=-3mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-50mA
VCB=-30V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
D
E
F
60-120
100-200
160-320
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