參數(shù)資料
型號: HGTP7N60C3D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 3.3V 72-mc CPLD
中文描述: 14 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: TO-220AB, 3PIN
文件頁數(shù): 5/7頁
文件大小: 197K
代理商: HGTP7N60C3D
3-26
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
f
M
,
2
10
20
30
10
100
200
1
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 50
, L = 1mH
V
GE
= 15V
V
GE
= 10V
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 2.1
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
V
CE(PK)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
10
20
30
40
T
J
= 150
o
C, V
GE
= 15V, R
G
= 50
, L = 1mH
50
C
OES
C
RES
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
1000
1200
C
C
IES
FREQUENCY = 1MHz
800
600
400
200
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
I
G
REF = 1.044mA, R
L
= 50
, T
C
= 25
o
C
0
300
200
400
500
600
15
12.5
10
7.5
5
0
5
10
15
20
25
30
0
100
2.5
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
P
D
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
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