- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384405 > HGTP7N60C3D (INTERSIL CORP) 72 MACROCELL 3.3 VOLT ISP CPLD PDF資料下載
參數(shù)資料
| 型號(hào)： | HGTP7N60C3D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 197K |
| 代理商： | HGTP7N60C3D |
3-23
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
μ
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
2.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.6
2.0
V
T
C
= 150
o
C
-
1.9
2.4
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.0
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
25V
-
-
±
250
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 50
V
GE
= 15V
L = 1mH
V
CE(PK)
= 480V
40
-
-
A
V
CE(PK)
= 600V
6
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
8
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
23
30
nC
V
GE
= 20V
-
30
38
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 50
L = 1mH
-
8.5
-
ns
Current Rise Time
t
RI
-
11.5
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
350
400
ns
Current Fall Time
t
FI
-
140
275
ns
Turn-On Energy
E
ON
-
165
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
600
-
μ
J
Diode Forward Voltage
V
EC
I
EC
= 7A
-
1.9
2.5
V
Diode Reverse Recovery Time
t
rr
I
EC
= 7A, dI
EC
/dt = 200A/
μ
s
-
25
35
ns
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
18
30
ns
Thermal Resistance
R
θ
JC
IGBT
-
-
2.1
o
C/W
Diode
-
-
2.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTP7N60C3D, HGT1S7N60C3D, and HGT1S7N60C3DS
were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP7N60C3D | 3.3V 72-mc CPLD |
| HGT1S7N60C3DS | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT4E20N60A4DS | CONNECTOR ACCESSORY |
| HGT4E30N60B3DS | CONNECTOR ACCESSORY |
| HGTG30N60B3D | 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 600V 14A TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, 600V, 14A, TO-220 |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| HGTP7N60C3D_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGTP7N60C3DS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB |
| HGTP7N60C3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。