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參數(shù)資料
| 型號(hào)： | HGTP5N120CNS |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| 中文描述： | 晶體管| IGBT的|正陳| 1.2KV五（巴西）國際消費(fèi)電子展|第25A一（c）|至263AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 89K |
| 代理商： | HGTP5N120CNS |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
10
8
50
6
100
2
200
T
C
75
o
C 15V
V
GE
75
o
C12V
T
J
= 150
o
C, R
G
= 25
, L = 5mH, V
CE
= 960V
T
C
V
GE
15V
12V
110
o
C
110
o
C
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 0.75
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
= 75
o
C, V
GE
= 15V
IDEAL DIODE
f
M
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
11
12
13
14
15
10
20
30
40
20
30
40
50
70
t
SC
I
SC
60
10
15
25
35
80
V
CE
= 840V, R
G
= 25
, T
J
= 125
o
C
T
C
= -55
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
5
10
15
6
8
10
30
25
20
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= 25
o
C
T
C
= 150
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
15
20
0
2
4
6
8
10
5
25
0
30
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
=
15V
PULSE DURATION = 250
μ
s
E
O
,
μ
J
2500
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1000
500
5
3
7
6
4
2
3000
8
9
10
2000
0
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
6
4
3
5
7
2
300
200
400
500
9
8
600
700
800
900
10
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 25
, L = 5mH, V
CE
= 960V
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
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PDF描述 |
|---|---|
| HGTP5N120CNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGT1S5N120BNDS | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTG5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP5N120 | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP5N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP6N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP6N40EID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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| HGTP7N60A4_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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