型號: | HGTP5N120CNS |
英文描述: | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
中文描述: | 晶體管| IGBT的|正陳| 1.2KV五(巴西)國際消費電子展|第25A一(c)|至263AB |
文件頁數(shù): | 3/7頁 |
文件大?。?/td> | 89K |
代理商: | HGTP5N120CNS |
相關(guān)PDF資料 |
PDF描述 |
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HGTP5N120CNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
HGT1S5N120BNDS | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
HGTG5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
HGTP5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
HGTP5N120 | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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HGTP5N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
HGTP6N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
HGTP6N40EID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
HGTP7N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
HGTP7N60A4_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |