參數(shù)資料
型號: HGTP5N120CNS
英文描述: TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
中文描述: 晶體管| IGBT的|正陳| 1.2KV五(巴西)國際消費電子展|第25A一(c)|至263AB
文件頁數(shù): 3/7頁
文件大?。?/td> 89K
代理商: HGTP5N120CNS
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 5A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 25
,
L = 5mH,
Test Circuit (Figure 20)
-
20
25
ns
Current Rise Time
t
rI
-
15
20
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
182
280
ns
Current Fall Time
t
fI
-
175
200
ns
Turn-On Energy
E
ON
-
1000
1300
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
560
800
μ
J
Diode Forward Voltage
V
EC
I
EC
= 10A
-
2.70
3.50
V
Diode Reverse Recovery Time
t
rr
I
EC
= 7A, dl
EC
/dt = 200A/
μ
s
-
50
60
ns
I
EC
= 1A, dl
EC
/dt = 200A/
μ
s
-
30
40
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
0.75
o
C/W
Diode
-
-
1.75
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
025
75
100
125
150
5
10
15
25
20
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
0
I
C
,
600
800
400
200
1000
1200
0
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 5mH
5
10
15
20
25
30
35
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
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