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參數(shù)資料
| 型號(hào)： | HGTP3N60A4D9A |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 600V的，開(kāi)關(guān)電源系列N溝道IGBT的與反平行Hyperfast二極管 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | HGTP3N60A4D9A |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
64
48
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
112
80
96
72
2
1
3
4
5
6
88
104
R
G
= 50
, L = 1mH, V
CE
= 390V
V
GE
= 12V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V, T
J
= 125
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
48
40
64
80
56
72
88
96
2
3
4
5
6
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
I
C
,
0
8
12
4
6
8
10
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
16
20
4
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
6
8
12
16
4
8
12
16
24
20
28
0
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1mA, R
L
= 100
, T
J
= 25
o
C
0
50
100
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
125
25
150
250
200
E
T
,
μ
J
R
G
= 50
, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 4.5A
I
CE
= 3A
I
CE
= 1.5A
30
10
100
R
G
, GATE RESISTANCE (
)
100
3
1000
E
T
,
μ
J
1000
I
CE
= 4.5A
I
CE
= 3A
I
CE
= 1.5A
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| HGTP3N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3R4724 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3D | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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