參數(shù)資料
型號(hào): HGTP5N120
廠商: Intersil Corporation
英文描述: 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
中文描述: 21A條,1200伏,不擴(kuò)散核武器條約系列N溝道IGBT的與反平行Hyperfast二極管
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 89K
代理商: HGTP5N120
1
HGTG5N120BND, HGTP5N120BND,
HGT1S5N120BNDS
21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTG5N120BN, HGTP5N120BND, and
HGT1S5N120BNDS are
N
on-
P
unch
T
hrough (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor. The IGBT used
is the development type TA49308. The Diode used is the
development type TA49058 (Part number RHRD6120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49306.
Symbol
Features
21A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 175ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance
SPICE Model
Temperature Compensating
SABER Model
www.intersil.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG5N120BND
TO-247
5N120BND
HGTP5N120BND
TO-220AB
5N120BND
HGT1S5N120BNDS
TO-263AB
5N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120BNS9A.
E
G
C
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
C
G
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
File Number
4597.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
相關(guān)PDF資料
PDF描述
HGTP5N120CNS TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
HGTP5N120CNS9A TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
HGT1S5N120BNDS 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
HGTG5N120BND 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
HGTP5N120BND 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP5N120BN 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs
HGTP5N120BND 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP5N120CN 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP5N120CND 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP5N120CNS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB