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參數(shù)資料
| 型號(hào)： | HGTP2N120CND |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBTs(13A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 92K |
| 代理商： | HGTP2N120CND |
3
Diode Forward Voltage
V
EC
t
rr
I
EC
= 2.6A
I
EC
= 1A, dl
EC
/dt = 200A/
μ
s
I
EC
= 2.6A, dl
EC
/dt = 200A/
μ
s
IGBT
-
1.8
2.0
V
Diode Reverse Recovery Time
-
31
35
ns
-
47
52
ns
Thermal Resistance Junction To Case
R
θ
JC
-
-
1.20
o
C/W
o
C/W
Diode
-
-
2.5
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
25
75
100
125
150
2
10
V
GE
= 15V
12
14
8
6
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I
C
,
4
6
600
800
400
200
1000
1200
0
12
14
8
2
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
16
f
M
,
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
5
50
100
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 1.2
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
V
GE
15V
12V
110
o
C
110
o
C
T
C
75
o
C 15V
V
GE
75
o
C 12V
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
1
3
4
2
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
20
30
40
50
10
0
20
30
40
50
10
0
10
14
15
13
12
11
V
CE
= 840V, R
G
= 51
, T
J
= 125
o
C
I
SC
t
SC
HGTP2N120CND, HGT1S2N120CNDS
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|---|---|
| HGTP2N120CNS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTP3N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP3N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4D9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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