- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384407 > HGTP7N60B3D (FAIRCHILD SEMICONDUCTOR CORP) 72 MACROCELL 3.3 VOLT ISP CPLD PDF資料下載
參數(shù)資料
| 型號： | HGTP7N60B3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 163K |
| 代理商： | HGTP7N60B3D |
2001 Fairchild Semiconductor Corporation
HGTP7N60B3D, HGT1S7N60B3DS Rev. B
HGTP7N60B3D, HGT1S7N60B3DS
14A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C at rated current. The IGBT is developmental type
TA49190. The diode used in anti-parallel with the IGBT is the
RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49191.
Symbol
Features
14A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP7N60B3D
TO-220AB ALT
G7N60B3D
HGT1S7N60B3DS
TO-263AB
G7N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S7N60B3DS9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
December 2001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP7N60B3D | 3.3V 72-mc CPLD |
| HGTP8P50G1 | 8A, 500V P-Channel IGBTs |
| HI-15530CLI | Manchester Encoder / Decoder |
| HI-15530CLM | Manchester Encoder / Decoder |
| HI-15530CLT | Manchester Encoder / Decoder |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP7N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP7N60C3D | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 600V 14A TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, 600V, 14A, TO-220 |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| HGTP7N60C3D_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。