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參數(shù)資料
| 型號： | HGTP2N120BN |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 12 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 498K |
| 代理商： | HGTP2N120BN |
3
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
H
Electrical Characteristics
T
C
= 25°C unless otherwise noted
(Continued)
Notes:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical
diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector
current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method
produces the true total Turn-Off Energy Loss.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(ON)l
t
rl
t
d(OFF)l
t
fl
E
ON1
E
ON2
E
OFF
t
d(ON)l
t
rl
t
d(OFF)l
t
fl
E
ON1
E
ON2
E
OFF
R
θ
JC
Current Trun-On Delay Time
IGBT and Diode at T
J
= 25
°
C
I
CE
= 2.6A
V
CE
= 960V
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
25
30
ns
Current Rise Time
-
11
15
ns
Curent Turn-Off Delay Time
-
205
220
ns
Current Fall Time
-
260
320
ns
Turn-On Energy (Note 4)
-
96
-
μ
J
μ
J
μ
J
Turn-On Energy (Note 4)
-
425
590
Turn-Off Energy (Note 5)
-
355
390
Curent Turn-On Delay Time
IGBT and Diode at T
J
= 150
°
C
I
CE
= 2.6A
V
CE
= 960V
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
21
25
ns
Current Rise Time
-
11
15
ns
Curent Turn-Off Delay Time
-
225
240
ns
Current Fall Time
-
360
420
ns
Turn-On Energy (Note 4)
-
96
-
μ
J
μ
J
μ
J
Turn-On Energy (Note 4)
-
800
1100
Turn-Off Energy (Note 5)
-
530
580
Thermal Resistance Junction to Case
-
-
1.20
°
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP2N120BND | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120CNDS | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGT1S2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP2N120BND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP2N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGTP2N120CNS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTP3N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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