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參數(shù)資料
| 型號： | HGTP2N120BN |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 12 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 498K |
| 代理商： | HGTP2N120BN |
2
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
H
Absolute Maximum Ratings
T
C
= 25
°
C, Unless Otherwise Specified
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is not implied.
Notes:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 3A, L = 4mH
3. V
CE(PK)
= 840V, T
J
= 125
°
C, R
G
= 51
.
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
HGTP2N120CN
HGT1S2N120CN
Units
BV
CES
Collector to Emitter Voltage
1200
V
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
Collector Current Continuous
At T
C
= 25
°
C
At T
C
= 110
°
C
Collector Current Pulsed (Note 1)
13
7
A
A
20
A
Gate to Emitter Voltage Continuous
±20
V
Gate to Emitter Voltage Pulsed
±30
V
Switching SOA Operating Area at T
J
= 150
°
C (Figure 2)
Power Dissipation Total at T
C
= 25
°
C
Power Dissipation Derating T
C
> 25
°
C
Forward Voltage Avalanche Energy (Note 2)
13A at 1200V
P
D
104
W
0.83
W/
°
C
E
AV
t
J
, T
STG
18
mJ
Operating and Storage Junction Temperature Range
-55 to 150
°
C
T
L
T
PKG
t
SC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, see Tech Brief 334
300
260
°
C
°
C
μ
s
Short Circuit Withstand Time (Note 3) at V
GE
= 15V
8
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
CES
BV
ECS
I
CES
Collector to Emitter Breakdown Voltage
I
C
= 250
μ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= 1200V
1200
-
-
V
Emitter to Collector Breakdown Voltage
15
-
-
V
Collector to Emitter Leakage Current
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 150
°
C
T
J
= 25
°
C
T
J
= 150
°
C
-
-
100
μ
A
μ
A
-
100
-
-
-
1.0
mA
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
C
= 2.6A,
V
GE
= 15V
-
2.05
2.40
V
-
2.75
3.50
V
V
GE(TH)
I
GES
SSOA
Gate to Emitter Threshold Voltage
I
C
= 45
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
°
C, R
G
= 51
,
V
GE
= 15V
L = 5mH, V
CE(PK)
= 1200V
I
C
= 2.6A, V
CE
= 600V
I
C
= 2.6A,
V
CE
= 600V
6.4
6.7
-
V
Gate to Emitter Leakage Current
-
-
±
250
nA
Switching SOA
13
-
-
A
V
GEP
Q
g(ON)
Gate to Emitter Plateau Voltage
-
10.2
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
30
36
nC
-
36
43
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP2N120BND | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120CNDS | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGT1S2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT |
| HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP2N120BND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP2N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGTP2N120CNS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTP3N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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