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參數(shù)資料
| 型號： | HGTP1N120BN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 5.3 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 97K |
| 代理商： | HGTP1N120BN |
2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
I
CE
= 1.0A
V
CE
= 960V
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
J
= 25
o
C
-
15
20
ns
Current Rise Time
t
rI
-
11
14
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
67
76
ns
Current Fall Time
t
fI
-
226
300
ns
Turn-On Energy (Note 5)
E
ON1
-
70
-
μJ
Turn-On Energy (Note 5)
E
ON2
-
172
187
μJ
Turn-Off Energy (Note 4)
E
OFF
-
90
123
μJ
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
I
CE
= 1.0 A
V
CE
= 960V
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
J
= 150
o
C
-
13
17
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
75
88
ns
Current Fall Time
t
fI
-
258
370
ns
Turn-On Energy (Note 5)
E
ON1
-
145
-
μJ
Turn-On Energy (Note 5)
E
ON2
-
385
440
μJ
Turn-Off Energy (Note 4)
E
OFF
-
120
175
μJ
Thermal Resistance Junction To Case
R
θ
JC
-
-
2.1
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves
(Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
4
5
1
25
75
100
125
150
3
2
6
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
C
,
1
2
600
800
400
200
1000
1200
0
4
6
5
7
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V, L = 2mH
HGTD1N120BNS, HGTP1N120BN
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HGTP1N120BND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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| HGTP1N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP20N35F3ULR3935 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP20N35F3VL | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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