參數(shù)資料
型號(hào)： HGTP1N120BN
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 5.3A, 1200V, NPT Series N-Channel IGBT
中文描述： 5.3 A, 1200 V, N-CHANNEL IGBT, TO-220AB
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 97K
代理商： HGTP1N120BN
2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
At T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
= 110
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
J
= 150
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T
C
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 3) at V
GE
= 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
CES
o
C25
5.3
2.7
6
±
20
±
30
A
A
A
V
V
o
C110
CM
GES
GEM
o
6A at 1200V
60
0.476
10
-55 to 150
o
D
W
o
o
W/
mJ
o
C
AV
J
, T
STG
C
L
300
260
8
13
o
C
C
s
s
pkg
o
SC
μ
μ
SC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. I
CE
= 7A, L = 400
μ
H, V
GE
= 15V, T
J
= 25
3. V
CE(PK)
= 840V, T
J
= 125
C, R
G
= 82
o
C.
o
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 1200V
T
C
= 25
o
C
-
-
250
μ
A
T
C
= 125
o
C
-
20
-
μ
A
T
C
= 150
o
C
-
-
1.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
V
C
= 1.0A
GE
= 15V
T
C
= 25
o
C
-
2.5
2.9
V
T
C
= 150
o
C
-
3.8
4.3
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 50
μ
A, V
CE
= V
GE
6.0
7.1
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
250
nA
Switching SOA
SSOA
T
L = 2mH, V
J
= 150
o
C, R
CE(PK)
G
= 82
= 1200V
,
V
GE
= 15V,
6
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 1.0A, V
CE
= 600V
-
9.2
-
V
On-State Gate Charge
Q
G(ON)
I
V
C
= 1.0A
CE
= 600V
V
GE
= 15V
-
14
20
nC
V
GE
= 20V
-
15
21
nC
HGTD1N120BNS, HGTP1N120BN
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