參數(shù)資料
型號： HGTP12N60B3D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk
中文描述： 27 A, 600 V, N-CHANNEL IGBT
封裝： TO-220AB ALTERNATE VERSION, 3 PIN
文件頁數(shù)： 6/8頁
文件大?。?/td> 124K
代理商： HGTP12N60B3D
2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.01
0.5
0.2
0.1
0.05
0.02
0.5
1.0
1.5
2.5
3.0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
10
0
20
30
40
50
100
o
C
25
o
C
150
o
C
40
30
20
10
0
t
r
,
I
EC
, FORWARD CURRENT (A)
5
10
20
t
rr
T
C
= 25
o
C, dI
EC
/dt = 100A/
μ
s
0
15
t
b
t
a
Test Circuit and Waveform
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
R
G
= 25
L = 100
μ
H
V
DD
= 480V
+
-
RHRP1560
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTG12N60C3D
相關PDF資料
PDF描述
HGT1S12N60B3DS 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGTG20N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）)
HGTG20N60B3D 3.3V 36-mc CPLD
HGTG20N60C3D 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(45A, 600V, UFS系列帶超快二極管的N溝道絕緣柵雙極型晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
HGTP12N60C3 功能描述:IGBT 晶體管 24a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP12N60C3D 功能描述:IGBT 晶體管 HGTP12N60C3D RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP12N60C3R 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP12N60D1 制造商:Harris Corporation 功能描述:
HGTP14N0FVLR4600 制造商:Rochester Electronics LLC 功能描述:- Bulk
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