型號: | HGTP12N60B3D |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | 功率晶體管 |
英文描述: | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk |
中文描述: | 27 A, 600 V, N-CHANNEL IGBT |
封裝: | TO-220AB ALTERNATE VERSION, 3 PIN |
文件頁數(shù): | 5/8頁 |
文件大?。?/td> | 124K |
代理商: | HGTP12N60B3D |
相關(guān)PDF資料 |
PDF描述 |
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HGT1S12N60B3DS | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
HGTG12N60C3D | 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
HGTG20N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列N溝道絕緣柵雙極型晶體管(帶反并行超快速二極管)) |
HGTG20N60B3D | 3.3V 36-mc CPLD |
HGTG20N60C3D | 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(45A, 600V, UFS系列帶超快二極管的N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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HGTP12N60C3 | 功能描述:IGBT 晶體管 24a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
HGTP12N60C3D | 功能描述:IGBT 晶體管 HGTP12N60C3D RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
HGTP12N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
HGTP12N60D1 | 制造商:Harris Corporation 功能描述: |
HGTP14N0FVLR4600 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |