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參數(shù)資料
| 型號： | HGTP10N40E1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| 中文描述： | 17.5 A, 400 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 37K |
| 代理商： | HGTP10N40E1D |
3-23
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 11. TYPICAL FALL TIME (I
C
= 5A)
FIGURE 12. TYPICAL FALL TIME (I
C
= 10A)
Typical Performance Curves
(Continued)
1000
800
600
400
200
0
C
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 0.1MHz
CISS
COSS
CRSS
1200
3.00
2.75
2.50
2.25
2.00
1.75
1.50
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
V
C
,
I
C
= 5A, V
GE
= 15V
I
C
= 5A, V
GE
= 10V
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
T
D
,
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L =25
μ
H, R
G
= 25
V
GE
V
CE
I
C
W
OFF
=
∫
I
C
*
V
CE
dt
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
F
,
I
C
= 5A, V
GE
= 10V, V
CL
= 300V
L = 50
μ
H, R
G
= 50
40C1/50C1
40E1/50E1
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
F
,
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 50
μ
H, R
G
= 50
40C1/50C1
40E1/50E1
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP10N50C1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTP10N50E1D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk |
| HGTP10N40C1D | CAP 0.082UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| HGTP10N40F1D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk |
| HGTP10N50F1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP10N40EID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP10N40F1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N50C1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 12A, 400V and 500V N-Channel IGBTs |
| HGTP10N50C1D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTP10N50E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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