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參數(shù)資料
| 型號(hào)： | HGTG40N60B3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N溝道絕緣柵雙極晶體管) |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | HGTG40N60B3 |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
t
d
,
40
60
80
100
100
150
200
250
300
R
G
= 3
, L = 100
μ
H, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
40
60
80
100
20
60
100
140
180
R
G
= 3
, L = 100
μ
H, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V AND 15V
T
J
= 25
o
C, V
GE
= 10V AND 15V
I
C
,
0
40
80
120
160
200
5
7
8
9
10
4
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
DUTY CYCLE = <0.5%, V
CE
= 10V
PULSE DURATION = 25
μ
s
Q
G
, GATE CHARGE (nC)
200
0
12
15
9
6
3
0
100
50
150
250
300
I
g(REF)
= 3.255mA, R
L
= 7.5
, T
C
= 25
o
C
V
CE
= 600V
V
CE
= 200V
V
CE
= 400V
V
G
,
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
2
C
C
IES
C
OES
FREQUENCY = 400kHz
4
6
8
10
12
14
HGTG40N60B3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60B3R4729 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG40N60C3 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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