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參數(shù)資料
| 型號： | HGTG40N60B3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N溝道絕緣柵雙極晶體管) |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 76K |
| 代理商： | HGTG40N60B3 |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode Both at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 100
μ
H
Test Circuit (Figure 17)
-
47
-
ns
Current Rise Time
t
rI
-
35
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
285
375
ns
Current Fall Time
t
fI
-
100
175
ns
Turn-On Energy
E
ON
-
1850
-
μ
J
Turn-Off Energy (Note 1)
E
OFF
-
2000
-
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.43
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves
(Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
25
50
75
100
125
150
20
0
40
60
80
100
PACKAGE LIMITED
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
250
700
150
0
I
C
,
50
100
300
400
200
100
500
600
200
0
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V
f
M
,
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
20
40
60
100
1
100
T
C
75
o
C
V
GE
15V
110
o
C
10V
110
o
C
15V
10V
75
o
C
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 0.43
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE
= 480V
80
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
4
6
8
10
14
16
12
18
200
300
400
500
600
700
800
900
t
SC
I
SC
V
CE
= 360V, R
G
= 3
, T
J
= 125
o
C
HGTG40N60B3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60B3R4729 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG40N60C3 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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