參數(shù)資料
型號(hào)： HGTG40N60B3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 70A, 600V, UFS Series N-Channel IGBT
中文描述： 70 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 6/8頁
文件大小： 181K
代理商： HGTG40N60B3
2003 Fairchild Semiconductor Corporation
HGTG40N60A4 Rev. B2
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs
GATE TO EMITTER VOLTAGE
FIGURE 19. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
1
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
5
125
25
150
6
4
E
T
,
I
CE
= 80A
I
CE
= 20A
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 40A
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
10
1
500
E
T
,
I
CE
= 80A
I
CE
= 40A
I
CE
= 20A
100
T
J
= 125
o
C, L = 200
μ
H
V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
10
20
30
40
50
0
2
4
8
10
12
6
60
70
80
90
100
FREQUENCY = 1MHz
14
C
IES
C
RES
C
OES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.9
10
12
2.0
2.2
2.1
11
13
14
15
16
2.3
2.4
V
C
,
I
CE
= 80A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
I
CE
= 40A
I
CE
= 20A
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
HGTG40N60A4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG40N60B3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC
HGTG40N60B3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG40N60B3_Q 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG40N60B3R4729 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG40N60C3 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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