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參數(shù)資料
| 型號(hào)： | HGTG40N60B3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 70A, 600V, UFS Series N-Channel IGBT |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 181K |
| 代理商： | HGTG40N60B3 |
2003 Fairchild Semiconductor Corporation
HGTG40N60A4 Rev. B2
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C
I
CE
= 40A
V
CE
= 0.65 BV
CES
V
GE
= 15V
R
G
= 2.2
L = 200
μ
H
Test Circuit (Figure 20)
-
27
-
ns
Current Rise Time
t
rI
-
20
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
185
225
ns
Current Fall Time
t
fI
-
55
95
ns
Turn-On Energy (Note 3)
E
ON1
-
400
-
μ
J
Turn-On Energy (Note 3)
E
ON2
-
1220
1400
μ
J
Turn-Off Energy (Note 2)
E
OFF
-
700
800
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.2
o
C/W
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 20.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
40
20
30
25
75
100
125
150
60
50
V
GE
= 15V
70
80
PACKAGE LIMITED
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
100
0
I
C
,
25
50
300
400
200
100
500
600
0
125
150
75
175
200
225
T
J
= 150
o
C, R
G
= 2.2
, V
GE
= 15V, L = 100
μ
H
HGTG40N60A4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60B3R4729 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG40N60C3 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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