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參數(shù)資料
| 型號： | HGTG30N60B3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 214K |
| 代理商： | HGTG30N60B3D |
2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
20
10
30
50
25
30
35
40
45
50
40
55
60
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
20
0
10
50
250
200
100
60
150
50
40
30
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
30
60
10
250
300
50
40
100
200
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 3
, L = 1mH,
V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
30
60
10
40
100
120
50
40
60
80
T
J
= 150
o
C, V
GE
= 10V AND 15V
T
J
= 25
o
C, V
GE
= 10V AND 15V
R
G
= 3
, L = 1mH, V
CE
= 480V
I
C
,
0
50
100
150
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
4
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= -55
o
C
Q
G
, GATE CHARGE (nC)
0
8
10
6
4
2
0
50
V
G
,
V
CE
= 400V
V
CE
= 600V
150
200
100
12
14
16
V
CE
= 200V
I
g (REF)
= 1mA, R
L
= 10
, T
C
= 25
o
C
HGTG30N60B3D, HGT4E30N60B3DS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG30N60B3D_Q | 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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