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參數(shù)資料
| 型號： | HGTG30N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 191K |
| 代理商： | HGTG30N60A4D |
200
4
Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B
1
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
2
6
8
10
4
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
1.7
12
1.8
2.0
1.9
11
13
14
15
16
2.1
2.3
V
C
,
I
CE
= 60A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
I
CE
= 30A
CE
= 15A
2.2
10
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
10
15
20
25
25
o
C
125
o
C
5
35
30
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
60
40
20
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
30
20
70
50
30
10
10
15
25
80
100
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/
μ
s
125
o
C t
rr
5
90
300
400
500
700
800
t
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
10
0
20
30
40
50
60
900
1000
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 30A, V
CE
= 390V
1000
600
200
0
200
Q
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
500
1200
800
400
300
400
900
1400
600
700
800
125
o
C, I
EC
= 30A
125
o
C, I
EC
= 15A
25
o
C, I
EC
= 15A
25
o
C, I
EC
= 30A
V
CE
= 390V
HGTG30N60A4D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG30N60A4 | 600V, SMPS Series N-Channel IGBT(600V, SMPS系列 N溝道IGBT) |
| HGTG30N60A4 | 600V, SMPS Series N-Channel IGBT |
| HGTG30N60B3 | 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGTG30N60C3 | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG30N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG30N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-247 |
| HGTG30N60B3 | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG30N60B3D | 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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