參數(shù)資料
型號(hào)： HGTG30N60A4D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 600V, SMPS Series N-Channel IGBT with
中文描述： 75 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 191K
代理商： HGTG30N60A4D
200
4
Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B
1
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG30N60A4D,
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
75
60
240
±
20
±
30
A
A
A
V
V
150A at 600V
463
3.7
-55 to 150
260
W
W/
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
CES
I
C
= 250
μ
A, V
GE
= 0V
V
CE
= 600V
600
-
-
V
Collector to Emitter Leakage Current
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
-
250
μ
A
-
-
2.8
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 30A,
V
GE
= 15V
-
1.8
2.6
V
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 250
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V,
L = 100
μ
H, V
CE
= 600V
I
C
= 30A, V
CE
= 300V
I
C
= 30A,
V
CE
= 300V
4.5
5.2
7.0
V
Gate to Emitter Leakage Current
-
-
±
250
nA
Switching SOA
150
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
Q
g(ON)
-
8.5
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
225
270
nC
-
300
360
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
V
EC
t
rr
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 30A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
,
L = 200
μ
H,
Test Circuit (Figure 24)
-
25
-
ns
Current Rise Time
-
12
-
ns
Current Turn-Off Delay Time
-
150
-
ns
Current Fall Time
-
38
-
ns
Turn-On Energy (Note 2)
-
280
-
μ
J
μ
J
μ
J
Turn-On Energy (Note 2)
-
600
-
Turn-Off Energy (Note 3)
-
240
350
Current Turn-On Delay Time
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 30A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 3
,
L = 200
μ
H,
Test Circuit (Figure 24)
-
24
-
ns
Current Rise Time
-
11
-
ns
Current Turn-Off Delay Time
-
180
200
ns
Current Fall Time
-
58
70
ns
Turn-On Energy (Note 2)
-
280
-
μ
J
μ
J
μ
J
Turn-On Energy (Note 2)
-
1000
1200
Turn-Off Energy (Note 3)
-
450
750
Diode Forward Voltage
I
EC
= 30A
I
EC
= 30A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
2.2
2.5
V
Diode Reverse Recovery Time
-
40
55
ns
-
30
42
ns
HGTG30N60A4D
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG30N60A4D 制造商:Intersil Corporation 功能描述:IGBT TO-247
HGTG30N60A4D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-247
HGTG30N60B3 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG30N60B3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG30N60B3D 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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