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參數(shù)資料
| 型號： | HGTG30N60A4 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 178K |
| 代理商： | HGTG30N60A4 |
200
4
Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B
2
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
160
120
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
220
200
180
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
20
10
30
40
50
60
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
30
40
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
50
70
20
10
30
40
50
60
0
T
J
= 125
o
C, V
GE
= 12V OR 15V
60
I
C
,
0
50
100
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
300
350
6
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
250
200
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2.5
12.5
0
7.5
I
G(REF)
= 1mA, R
L
= 15
, T
J
= 25
o
C
V
CE
= 200V
5.0
10.0
15.0
V
CE
= 600V
50
100
150
200
250
0
V
CE
= 400V
I
CE
= 15A
0
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
125
25
150
5
E
T
,
R
G
= 3
, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
4
I
CE
= 60A
I
CE
= 30A
1
0
10
100
R
G
, GATE RESISTANCE (
)
16
3
300
E
T
,
20
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
12
8
4
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PDF描述 |
|---|---|
| HGTG30N60B3 | 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGTG30N60C3 | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG30N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG30N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG30N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-247 |
| HGTG30N60B3 | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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