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參數(shù)資料
| 型號： | HGTG30N60A4 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 178K |
| 代理商： | HGTG30N60A4 |
200
4
Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG30N60A4
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . .SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . T
PKG
75
60
240
±
20
±
30
A
A
A
V
V
150A at 600V
463
3.7
-55 to 150
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
-
250
μ
A
-
-
4.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 30A,
V
GE
= 15V
-
1.8
2.6
V
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V
L = 100
μ
H, V
CE
= 600V
4.5
5.2
7.0
V
Gate to Emitter Leakage Current
I
GES
-
-
±
250
nA
Switching SOA
SSOA
150
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 30A, V
CE
= 300V
-
8.5
-
V
On-State Gate Charge
Q
g(ON)
I
C
= 30A,
V
CE
= 300V
V
GE
= 15V
-
225
270
nC
V
GE
= 20V
-
300
360
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 30A
V
CE
= 390V
V
GE
=15V
R
G
= 3
L = 200
μ
H
Test Circuit - (Figure 20)
-
25
-
ns
Current Rise Time
t
rI
-
12
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
150
-
ns
Current Fall Time
t
fI
-
38
-
ns
Turn-On Energy (Note 2)
E
ON1
-
280
-
μ
J
Turn-On Energy (Note 2)
E
ON2
-
600
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
240
350
μ
J
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG30N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG30N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG30N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-247 |
| HGTG30N60B3 | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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