參數(shù)資料
型號(hào)： HGTG20N60C3R
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 40A, 600V, Rugged UFS Series N-Channel IGBTs
中文描述： 45 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 5/6頁
文件大?。?/td> 107K
代理商： HGTG20N60C3R
5-7
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
Typical Performance Curves
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C
C
IES
C
RES
3000
3500
4000
FREQUENCY = 1MHz
C
OES
4500
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
240
600
12
6
0
20
80
90
360
15
3
9
00
120
480
70
60
50
30
10
40
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
I
G
REF = 1.376mA, R
L
= 30
, T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.1
0.05
0.2
0.02
SINGLE PULSE
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
Z
θ
J
,
R
0.5
0.01
R
G
= 10
L = 1mH
V
DD
= 480V
+
-
RURP1560
t
FI
t
D(OFF)I
t
RI
t
D(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
相關(guān)PDF資料
PDF描述
HGT1S20N60C3S 45A, 600V, UFS Series N-Channel IGBT
HGT1S20N60C3S XC9536-7PC44C - NOT RECOMMENDED for NEW DESIGN
HGT1S20N60C3S9A Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53
HGT1S2N120BNDS 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管)
HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG24N60D1 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTG24N60D1D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTG24N60DID 制造商:Harris Corporation 功能描述:
HGTG27N120BN 功能描述:IGBT 晶體管 72A 1200V NPT Series N-Ch IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG27N120BN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC
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