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參數(shù)資料
| 型號： | HGTG20N60C3R |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 40A, 600V, Rugged UFS Series N-Channel IGBTs |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HGTG20N60C3R |
5-5
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR EMITTER ON STATE VOLTAGE
FIGURE 4. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 5. TURN ON DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
FIGURE 6. TURN OFF DELAY TIME AS A FUNCTION OF
COLLECTOR EMITTER CURRENT
9
10
13
20
50
60
70
15
30
80
I
C
,
8
7
6
11
12
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
10
0
40
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250
μ
s
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
15
20
25
30
35
40
4
3
2
1
0
5
6
7
8
9
10
10
5
0
V
GE
= 15.0V
12.0V
10.0V
9.0V
8.5V
8.0V
7.5V
DUTY CYCLE <0.5%, T
C
= 25
o
C
PULSE DURATION = 250
μ
s
I
C
,
40
2
6
4
10
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
30
60
70
80
8
0
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -40
o
C
0
10
20
90
1
3
5
7
9
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%
V
GE
= 15V
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
V
GE
= 15V
5
10
15
25
35
40
26
28
30
32
34
t
D
,
I
CE
, COLLECTOR-EMITTER CURRENT (A)
36
38
20
30
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 15V
t
D
,
5
10
15
I
CE
, COLLECTOR EMITTER CURRENT (A)
25
35
20
300
400
425
350
325
275
40
30
T
J
= 150
o
C, R
G
= 10
, L = 1mH, V
CE(PK)
= 480V, V
GE
= 15V
375
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
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