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參數(shù)資料
| 型號(hào)： | HGTG12N60D1 |
| 廠商： | Intersil Corporation |
| 英文描述： | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
| 中文描述： | 第12A，600V的N溝道IGBT的與反并聯(lián)二極管超快 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 229K |
| 代理商： | HGTG12N60D1 |
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.9
10
12
2.0
2.2
2.1
11
13
14
15
16
2.3
2.4
V
C
,
I
CE
= 18A
I
CE
= 12A
I
CE
= 6A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 10
L = 500
μ
H
V
DD
= 390V
+
-
RHRP660
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
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| HGTG12N60D1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris 功能描述:Harris TO-247 NXC6A, NXF7D 制造商:Harris Corporation 功能描述: |
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| HGTG15N120C3D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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