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參數(shù)資料
| 型號(hào)： | HGTG12N60D1 |
| 廠商： | Intersil Corporation |
| 英文描述： | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
| 中文描述： | 第12A，600V的N溝道IGBT的與反并聯(lián)二極管超快 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 229K |
| 代理商： | HGTG12N60D1 |
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
= 15V
R
G
= 10
L = 500
μ
H
Test Circuit (Figure 20)
-
17
-
ns
Current Rise Time
t
rI
-
16
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
110
170
ns
Current Fall Time
t
fI
-
70
95
ns
Turn-On Energy (Note 3)
E
ON1
-
55
-
μ
J
Turn-On Energy (Note 3)
E
ON2
-
250
350
μ
J
Turn-Off Energy (Note 2)
E
OFF
-
175
285
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.75
o
C/W
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
40
20
30
25
75
100
125
150
60
50
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
I
C
,
10
20
300
400
200
100
500
600
0
50
60
30
70
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 200
μ
H
T
C
75
o
C
V
GE
15V
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
300
30
10
20
500
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
J
= 125
o
C, R
G
= 10
, L = 500
μ
H, V
CE
= 390V
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
10
11
12
15
0
2
10
16
50
125
175
300
t
SC
I
SC
20
250
13
14
4
6
8
12
14
18
75
100
150
200
225
275
V
CE
= 390V, R
G
= 10
, T
J
= 125
o
C
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
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